Method for real-time monitoring metal pollution of semiconductor wafer

Method for real-time monitoring metal pollution of semiconductor wafer

Provided is a method for real-time monitoring metal pollution of semiconductor wafer which includes to proceed a rapid thermal oxidation process to a wafer, and to measure a surface photo voltage of the wafer after the rapid thermal oxidation process.

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Bibliographische Detailangaben
Hauptverfasser: CHIANG, YEH-YU, TSAI, CHIA-HSIN, LIAO, MANUN, LIN, YUI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided is a method for real-time monitoring metal pollution of semiconductor wafer which includes to proceed a rapid thermal oxidation process to a wafer, and to measure a surface photo voltage of the wafer after the rapid thermal oxidation process.