Non-volatile memory cell

A non-volatile memory cell comprises a tunneling part; a coupling device; a read transistor; a first select transistor, connected to the read transistor, forming a read path with the read transistor in a read mode; an erase tunneling structure, forming a tunneling ejection path in an erase mode; and...

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Bibliographische Detailangaben
Hauptverfasser: LU, HSIAO-HUA, CHANG, CHIH-LUNG, KUO, CHIH-MING
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A non-volatile memory cell comprises a tunneling part; a coupling device; a read transistor; a first select transistor, connected to the read transistor, forming a read path with the read transistor in a read mode; an erase tunneling structure, forming a tunneling ejection path in an erase mode; and a program tunneling structure, forming a tunneling injection path in an program mode; wherein the read path is different from the tunneling ejection path and the tunneling injection path.