Non-volatile memory cell
A non-volatile memory cell comprises a tunneling part; a coupling device; a read transistor; a first select transistor, connected to the read transistor, forming a read path with the read transistor in a read mode; an erase tunneling structure, forming a tunneling ejection path in an erase mode; and...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A non-volatile memory cell comprises a tunneling part; a coupling device; a read transistor; a first select transistor, connected to the read transistor, forming a read path with the read transistor in a read mode; an erase tunneling structure, forming a tunneling ejection path in an erase mode; and a program tunneling structure, forming a tunneling injection path in an program mode; wherein the read path is different from the tunneling ejection path and the tunneling injection path. |
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