Flowable film curing penetration depth improvement and stress tuning

Flowable film curing penetration depth improvement and stress tuning

Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the flowable dielectric layer in an oxygen-containing gas, purging the chamber and curing the layer with UV radiation. By curing the layer after an o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE, JUNGAN, LIANG, JING-MEI, SUN, YONG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the flowable dielectric layer in an oxygen-containing gas, purging the chamber and curing the layer with UV radiation. By curing the layer after an oxygen-containing gas pre-soak, the layer can be more completely cured during the UV irradiation.