Resistance random access memory and fabrication method thereof

This invention discloses a resistance random access memory to solve the problem for device characteristic unstable and the power consumption unable to decrease of the known resistance random access memory. The resistance random access memory comprises a first electrode layer, a few-oxygen layer, an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PAN, CHIH-HUNG, CHANG, KUANANG, CHANG, TINGANG, TSAI, TSUNG-MING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!