Resistance random access memory and fabrication method thereof

This invention discloses a resistance random access memory to solve the problem for device characteristic unstable and the power consumption unable to decrease of the known resistance random access memory. The resistance random access memory comprises a first electrode layer, a few-oxygen layer, an insulation layer and a second electrode layer. The few-oxygen layer is mounted on the first electrode layer and composes of ITO, In2O3, TiO2 or ZnO. The insulation layer is mounted on the few-oxygen layer and composes of SiO2 or HfO. The second electrode layer is mounted on the insulation layer. Furthermore, a method for fabricating the resistance random access memory is also disclosed. Thus, it can actually resolve the said problem.