EUV lithography system and operating method therefor

EUV lithography system and operating method therefor

The invention relates to an EUV lithography system (1), comprising: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in whi...

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Hauptverfasser: OSORIO, EDGAR, SCHMIDT, STEFAN-WOLFGANG, TE SLIGTE, EDWIN, LOGTENBERG, HELLA, ZELLENRATH, MARK, EHM, DIRK HEINRICH
Format: Patent
Sprache:chi ; eng
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APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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creator OSORIO, EDGAR
SCHMIDT, STEFAN-WOLFGANG
TE SLIGTE, EDWIN
LOGTENBERG, HELLA
ZELLENRATH, MARK
EHM, DIRK HEINRICH
description The invention relates to an EUV lithography system (1), comprising: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) is designed for additionally feeding an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) for setting an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).
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language chi ; eng
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
title EUV lithography system and operating method therefor
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