EUV lithography system and operating method therefor
The invention relates to an EUV lithography system (1), comprising: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in whi...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to an EUV lithography system (1), comprising: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) is designed for additionally feeding an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) for setting an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a). |
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