Approach of controlling the wafer and the thin film surface temperature

A vapor deposition system and its wafer and thin-film temperature control method are disclosed. A susceptor carries a plurality of satellite disks with each bearing a wafer. The susceptor makes revolution around a center axle and each satellite disk rotates around its own axis. A carrier gas approac...

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Bibliographische Detailangaben
Hauptverfasser:	WU, CHUNG-YUAN, CHUNG, BUIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A vapor deposition system and its wafer and thin-film temperature control method are disclosed. A susceptor carries a plurality of satellite disks with each bearing a wafer. The susceptor makes revolution around a center axle and each satellite disk rotates around its own axis. A carrier gas approaches a first surface of the wafer and is heated to form a thin film to be deposited on the first surface. A heating plate is placed at a second surface of the wafer and the second surface is opposite to the first surface. One or more remote temperature detectors measure a temperature of a surface of the heating plate and the surface is opposite to the wafer. And a wafer-side temperature is calculated by the measured temperature of the heating plate.