Apparatus and method for curvature and thin film stress measurement

Apparatus and method for curvature and thin film stress measurement are disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a sample with a pitch. The det...

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Bibliographische Detailangaben
Hauptverfasser:	FU, CHUNG-HUA, ROBERT, CHAMPETIER, WU, CHUNG-YUAN, CHUNG, BUIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	MEASURING MEASURING ANGLES MEASURING AREAS MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS TESTING
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Beschreibung
Zusammenfassung:	Apparatus and method for curvature and thin film stress measurement are disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a sample with a pitch. The detector receives the light beams reflected from the sample. The curvature of the sample is calculated via a distance between spots of the light beams on the detector or a size variation of one of the spots.