Method for producing semiconductor having gettering layer, method for manufacturing semiconductor device, and semiconductor device

This method for producing a semiconductor having a gettering layer comprises: a film formation step for forming an impurity-containing film on one surface of a semiconductor; and a melting step for melting the semiconductor surface layer by irradiating the semiconductor with laser light from the one surface side. Since the gettering layer is produced by forming a high impurity concentration region by doping the molten semiconductor with an impurity in the melting step, the semiconductor surface layer is able to be doped with the impurity at a high concentration. By doping the molten semiconductor with the impurity at a high concentration, a high impurity concentration region is able to be formed, thereby imparting the semiconductor surface layer with gettering ability. In addition, irradiation of laser light enables processing with a low thermal load.