Film forming method and film forming apparatus

A film forming method includes supplying a first source gas containing a first metal element onto a substrate, supplying a second source gas containing a second metal element onto the substrate, supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first...

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Bibliographische Detailangaben
Hauptverfasser:	OTANI, MUNEYUKI, OKUBO, KAZUYA, KUMAGAI, TAKESHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A film forming method includes supplying a first source gas containing a first metal element onto a substrate, supplying a second source gas containing a second metal element onto the substrate, supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first metal element and the second metal element to generate a first reaction product and a second reaction product, respectively, to the substrate, to generate a third reaction product containing the first metal element, the second metal element and the nonmetal element. A mixing ratio of the first metal element contained in the third reaction product is higher than that of the second metal element, and a crystallization temperature of the second reaction product is higher than that of the first reaction product.