Magnetic field sensor arrangement, corresponding process for its production and operating method

The present invention relates to a magnetic field sensor arrangement, to a corresponding manufacturing method and to an operating method. The magnetic field sensor arrangement comprises an ASIC substrate (AC; AC') having a front face (VS) and a rear face (RS) and a hall sensor device (H; H'; H") which has a hall sensor region (HS; HS'; HS") that consists of a III-V semiconductor material, said region being embedded in an insulation layer arrangement (I0, I1, I2, I3; I0, I1, I2, I3, I4, I5) applied to the front face (VS). The hall sensor region (HS; HS'; HS") is electrically connected to a hall sensor evaluation circuit device (101) formed in the ASIC substrate (AC; AC'), via a conductor unit (L2) guided through the insulation layer arrangement (I0, I1, I2, I3; I0, I1, I2, I3, I4, I5).