Apparatus and method for processing substrate

Provided is an apparatus and method for processing a substrate. The apparatus includes a chamber in which the substrate is transferred through a passage defined in one side of the chamber, and a supply port for supplying a gas toward the substrate is disposed at a side opposite to the passage, the c...

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Bibliographische Detailangaben
Hauptverfasser:	SHIN, CHANG-HUN, KIM, CHANG-DOL, SONG, BYOUNG-GYU, KIM, KYONG-HUN, SHIN, YANG-SIK, HYON, JUN-JIN, KIM, HAI-WON, KIM, EUN-DUCK, KIM, YONG-KI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is an apparatus and method for processing a substrate. The apparatus includes a chamber in which the substrate is transferred through a passage defined in one side of the chamber, and a supply port for supplying a gas toward the substrate is disposed at a side opposite to the passage, the chamber providing an inner space in which a process with respect to the substrate is performed, an auxiliary susceptor disposed in the inner space and having a shape corresponding to that of the inner space and an opening, and a main susceptor inserted into the opening to rotate in a state where the substrate is placed on the main susceptor to heat the substrate.