Back side illumination semiconductor structure with semiconductor capacitor connected to floating diffusion node
The present invention is related to a back side illumination (BSI) semiconductor structure with semiconductor capacitor connected to the floating diffusion node, which is configured to provide a semiconductor capacitor above the floating diffusion node for reducing dimension of the floating diffusio...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The present invention is related to a back side illumination (BSI) semiconductor structure with semiconductor capacitor connected to the floating diffusion node, which is configured to provide a semiconductor capacitor above the floating diffusion node for reducing dimension of the floating diffusion node to eliminate light influence and enhance light absorption efficiency. |
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