Thin-film transistor array substrate structure and manufacturing method thereof

A thin-film transistor array substrate structure and a manufacturing method thereof are disclosed by the present invention. The thin-film transistor array substrate structure comprises a panel, a light shielding layer and a low hydrogen content layer. The light shielding layer comprises a silicon ni...

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Bibliographische Detailangaben
Hauptverfasser: HUANG, CHIAI, HSU, MINING
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A thin-film transistor array substrate structure and a manufacturing method thereof are disclosed by the present invention. The thin-film transistor array substrate structure comprises a panel, a light shielding layer and a low hydrogen content layer. The light shielding layer comprises a silicon nitride layer and a light shielding layer amorphous silicon. The silicon nitride layer is formed on the panel. The light shielding layer amorphous silicon is formed on the silicon nitride layer. The low hydrogen content layer comprises a silicon oxide layer and a low hydrogen content layer amorphous silicon. The silicon oxide layer is formed on the light shielding layer amorphous silicon. The low hydrogen content layer amorphous silicon is formed on the silicon oxide layer. The mask layer number of the light shielding layer is equal to the mask layer number of the low hydrogen content layer. Manufacturing light shielding layer time is almost equal to the Manufacturing low hydrogen content layer, which balances capaci