Semiconductor device package

A semiconductor device package includes a substrate, a transistor, and a lead frame. The transistor is disposed on the substrate. The transistor includes an active layer, at least one source electrode, at least one drain electrode, at least one gate electrode, a first insulating layer, a first source pad, a first drain pad, at least one source plug, and at least one drain plug. The source electrode and the drain electrode are both disposed on the active layer. Projections of the source electrode and the drain electrode on the active layer respectively form a source area and a drain area. The first insulating layer at least covers a portion of the source electrode and a portion of the drain electrode. The first source pad is disposed on the first insulating layer, and a projection of the first source pad on the active layer forms a source pad area. The source pad area overlaps at least a portion of the drain area. The first drain pad is disposed on the first insulating layer. The lead frame is disposed at a si