Apparatus and process for producing a single crystal of silicon

An apparatus and process for producing a single crystal of silicon. The apparatus comprises a plate with a top side having an outer edge and an inner edge, with a central opening adjoining the inner edge, and with a tube which extends from the central opening to beneath a bottom side of the plate; a...

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Bibliographische Detailangaben
Hauptverfasser:	STEIN, WALDEMAR, BRENNINGER, GEORG, HAEBERLEN MAIK
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	An apparatus and process for producing a single crystal of silicon. The apparatus comprises a plate with a top side having an outer edge and an inner edge, with a central opening adjoining the inner edge, and with a tube which extends from the central opening to beneath a bottom side of the plate; a device for metering granular silicon onto the top side of the plate; a first induction heating coil which is arranged above the plate and is provided for melting of the granular silicon deposited; a second induction heating coil which is arranged beneath the plate and is provided for stabilization of a melt of silicon, the melt being present upon a growing single crystal of silicon. It is a characteristic feature of the apparatus that the top side of the plate consists of ceramic material and has elevations, the distance between the middles of adjacent elevations in radial direction being not less than 2 mm and not more than 15 mm.