Nonvolatile memory elements having conductive paths of semimetals or semiconductors
A memory element programmable between different impedance states can include a first electrode layer comprising a semimetal or semiconductor (semimetal/semiconductor); a second electrode; and a switch layer formed between the first and second electrodes and comprising an insulating material; wherein...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A memory element programmable between different impedance states can include a first electrode layer comprising a semimetal or semiconductor (semimetal/semiconductor); a second electrode; and a switch layer formed between the first and second electrodes and comprising an insulating material; wherein atoms of the semimetal/semiconductor provide a reversible change in conductivity of the insulating material by application of electric fields. |
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