Resistive random access memory

Resistive random access memory

A resistive random access memory including a first electrode, a dielectric layer, at least a first nanostructure and a second electrode is provided. The dielectric layer is disposed on the first electrode. The first nanostructure is disposed between the first electrode and the dielectric layer and i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIN, CHANING, CHEN, CHING-HUA
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A resistive random access memory including a first electrode, a dielectric layer, at least a first nanostructure and a second electrode is provided. The dielectric layer is disposed on the first electrode. The first nanostructure is disposed between the first electrode and the dielectric layer and includes a plurality of first cluster-type metal nanoparticles and a plurality of first covering-type metal nanoparticles. The first cluster-type metal nanoparticles are disposed on the first electrode. The first covering-type metal nanoparticles covers the first cluster-type metal nanoparticles, wherein a diffusion coefficient of the first cluster-type metal nanoparticles is larger than a diffusion coefficient of the first covering-type metal nanoparticles. The second electrode is disposed on the dielectric layer.