Vapor phase film deposition apparatus

To provide a film-deposition apparatus which realizes at the same time three factors, that is, a high partial pressure of volatile components, a great flow velocity and a smooth deposition rate curve at a lower consumption of gas. The reactor structure 10 is constituted with a disk-like susceptor 20, an opposing face member 30 which opposes the susceptor 20, an injector 40, a material gas introduction portion 60, and a gas exhaust portion 38. A substrate W is retained by a wafer holder 22, and the wafer holder 22 is retained by a supporting member 26 of the susceptor 20. The susceptor 20 revolves around its central axis and the substrate W also rotates by itself. The opposing face member 30 is structured so that a fan-shaped recessed portion 34 and a fan-shaped raised portion 36 are formed alternately in a radial manner, by which the height of the flow channel changes in a circumferential direction. As a result, it is possible to realize film deposition equivalent to that attained under optimal conditions by