Method for decreasing contact resistance of oxide-based thin film transistor

The present invention provides a method for decreasing contact resistance of oxide-based thin film transistor, and it performs a microwave annealing process for metal oxide TFT. That is, the microwave heating technology is applied on the metal oxide TFT fabrication according to the present invention...

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Bibliographische Detailangaben
Hauptverfasser:	LIU, PO-TSUN, TENG, LI-FENG, FUH, CHUR-SHYANG, LEE, YAO-JEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a method for decreasing contact resistance of oxide-based thin film transistor, and it performs a microwave annealing process for metal oxide TFT. That is, the microwave heating technology is applied on the metal oxide TFT fabrication according to the present invention and it can substantially decrease the source/drain resistance of oxide-based TFTs.