A semiconductor device, and a method of improving breakdown voltage of a semiconductor device

A semiconductor device, and a method of improving breakdown voltage of a semiconductor device

A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MCAULIFFE, DONAL P, COYNE, EDWARD JOHN, WHISTON, SEAMUS P, LANE, WILLIAM ALLAN, O HANNAIDH, BREANDAN POL OG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator MCAULIFFE, DONAL P
COYNE, EDWARD JOHN
WHISTON, SEAMUS P
LANE, WILLIAM ALLAN
O HANNAIDH, BREANDAN POL OG
description A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201515183A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201515183A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201515183A3</originalsourceid><addsrcrecordid>eNrjZIh1VChOzc1Mzs9LKU0uyS9SSEkty0xO1VFIzEtRSFTITS3JyE9RyE9TyMwtKMovy8xLV0gqSk3MTskvz1Moy88pSUxPBUknYjWGh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEh4QbGRiaAqGFsaMxMWoAulY8AQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>A semiconductor device, and a method of improving breakdown voltage of a semiconductor device</title><source>esp@cenet</source><creator>MCAULIFFE, DONAL P ; COYNE, EDWARD JOHN ; WHISTON, SEAMUS P ; LANE, WILLIAM ALLAN ; O HANNAIDH, BREANDAN POL OG</creator><creatorcontrib>MCAULIFFE, DONAL P ; COYNE, EDWARD JOHN ; WHISTON, SEAMUS P ; LANE, WILLIAM ALLAN ; O HANNAIDH, BREANDAN POL OG</creatorcontrib><description>A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150416&amp;DB=EPODOC&amp;CC=TW&amp;NR=201515183A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150416&amp;DB=EPODOC&amp;CC=TW&amp;NR=201515183A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MCAULIFFE, DONAL P</creatorcontrib><creatorcontrib>COYNE, EDWARD JOHN</creatorcontrib><creatorcontrib>WHISTON, SEAMUS P</creatorcontrib><creatorcontrib>LANE, WILLIAM ALLAN</creatorcontrib><creatorcontrib>O HANNAIDH, BREANDAN POL OG</creatorcontrib><title>A semiconductor device, and a method of improving breakdown voltage of a semiconductor device</title><description>A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIh1VChOzc1Mzs9LKU0uyS9SSEkty0xO1VFIzEtRSFTITS3JyE9RyE9TyMwtKMovy8xLV0gqSk3MTskvz1Moy88pSUxPBUknYjWGh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEh4QbGRiaAqGFsaMxMWoAulY8AQ</recordid><startdate>20150416</startdate><enddate>20150416</enddate><creator>MCAULIFFE, DONAL P</creator><creator>COYNE, EDWARD JOHN</creator><creator>WHISTON, SEAMUS P</creator><creator>LANE, WILLIAM ALLAN</creator><creator>O HANNAIDH, BREANDAN POL OG</creator><scope>EVB</scope></search><sort><creationdate>20150416</creationdate><title>A semiconductor device, and a method of improving breakdown voltage of a semiconductor device</title><author>MCAULIFFE, DONAL P ; COYNE, EDWARD JOHN ; WHISTON, SEAMUS P ; LANE, WILLIAM ALLAN ; O HANNAIDH, BREANDAN POL OG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201515183A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MCAULIFFE, DONAL P</creatorcontrib><creatorcontrib>COYNE, EDWARD JOHN</creatorcontrib><creatorcontrib>WHISTON, SEAMUS P</creatorcontrib><creatorcontrib>LANE, WILLIAM ALLAN</creatorcontrib><creatorcontrib>O HANNAIDH, BREANDAN POL OG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MCAULIFFE, DONAL P</au><au>COYNE, EDWARD JOHN</au><au>WHISTON, SEAMUS P</au><au>LANE, WILLIAM ALLAN</au><au>O HANNAIDH, BREANDAN POL OG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>A semiconductor device, and a method of improving breakdown voltage of a semiconductor device</title><date>2015-04-16</date><risdate>2015</risdate><abstract>A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_TW201515183A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title A semiconductor device, and a method of improving breakdown voltage of a semiconductor device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T15%3A29%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MCAULIFFE,%20DONAL%20P&rft.date=2015-04-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW201515183A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true