A semiconductor device, and a method of improving breakdown voltage of a semiconductor device

A semiconductor device, and a method of improving breakdown voltage of a semiconductor device

A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MCAULIFFE, DONAL P, COYNE, EDWARD JOHN, WHISTON, SEAMUS P, LANE, WILLIAM ALLAN, O HANNAIDH, BREANDAN POL OG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.