Composition for forming inorganic film for multilayer resist process, and pattern formation method

The present invention is a composition for forming an inorganic film for a multilayer resist process, the composition containing a solvent and a metal compound including a plurality of metal atoms of at least one type selected from the group comprising titanium, tantalum, zirconium, and tungsten, an...

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Bibliographische Detailangaben
Hauptverfasser:	KURITA, SHUNSUKE, SAITOU, RYUUICHI, SAKAI, TATSUYA, FUJITA, KENJI, NAKAGAWA, HISASHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention is a composition for forming an inorganic film for a multilayer resist process, the composition containing a solvent and a metal compound including a plurality of metal atoms of at least one type selected from the group comprising titanium, tantalum, zirconium, and tungsten, an oxygen atom for crosslinking the metal atoms, and a polydentate ligand coordinated to the metal atom, the metal compound having an absolute molecular weight of 8,000 to 50,000 as measured by static light scattering. The metal compound preferably mainly includes a structure in which two crosslinking oxygen atoms are bonded to a metal atom.