Linear high-electron mobility transistor

Linear high-electron mobility transistor

Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device includes a gallium nitride (GaN) buffer layer formed on a substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN buffer layer, and an indium aluminum n...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TSERNG, HUA QUEN, SAUNIER, PAUL, CHOU, TSO MIN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device includes a gallium nitride (GaN) buffer layer formed on a substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN buffer layer, and an indium aluminum nitride barrier layer formed on the AlGaN layer. Other embodiments may also be described and/or claimed.