Method for manufacturing polysilicon

The disclosure provides a method for manufacturing polysilicon including the following steps. The bottom surface of an amorphous silicon (a-Si) layer is irradiated by laser emitting by a solid-state laser apparatus, so as to pre-heat the a-Si layer (step S11); and the top surface of the a-Si layer is irradiated by laser emitting by an excimer laser apparatus, so that the a-Si layer is crystallized to form polysilicon (step S12). In which, the step S11 is performed before a reserving time of the step S12, or is performed with the step S12 at the same time. The disclosure can significantly reduce the time of crystallizing the polysilicon by melting the a-Si layer, so as to efficiently enhance the yield of the polysilicon. Due to decreasing the temperature gradient of the melting point and crystallization of the polysilicon, the crystallizing yield of the polysilicon may be efficiently increased, and the crystal quality of the polysilicon may be improved. And the emitting times of the expansive excimer laser app