Method for increasing uniformity of polysilicon layer

A method for increasing uniformity of a polysilicon layer is provided. The method includes the steps of: forming an amorphous silicon layer on a substrate; performing a dry surface treatment on the amorphous silicon layer to form a first silicon oxide layer; removing the first silicon oxide layer fr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FANG, ZAN-YUAN, REN, DONG, HUANG, CHENG-SHIH, YEH, YUUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!