Method for increasing uniformity of polysilicon layer

A method for increasing uniformity of a polysilicon layer is provided. The method includes the steps of: forming an amorphous silicon layer on a substrate; performing a dry surface treatment on the amorphous silicon layer to form a first silicon oxide layer; removing the first silicon oxide layer from a surface of the amorphous silicon layer; forming a second silicon oxide layer on the surface of the amorphous silicon layer; and treating the amorphous silicon layer through a crystallization process to form a polysilicon gate layer. According to the method of the present invention, performing the dry surface treatment on the amorphous silicon layer avoids the problem of remaining ozone water in a wet treatment, and simultaneously cleans, oxidizes and prevents injury to the lower layer so as to increase the grain size and its uniformity of the polysilicon layer after the crystallization process. Further, the method of the present invention can be used to improve production efficiency and productivity, and an op