A laser annealing method

This invention discloses an annealing method using laser. The method includes the following steps: a laser bean is provided by a laser source; the laser bean is reflected and gathered again; the laser bean is applied to quickly scan the amorphous silicon area on the surface of a substrate; wherein, the laser bean is generated in the way of pulse sequence assembly, while the pulse sequence assembly includes M sets of pulse sequences and each set of pulse sequence includes N pulses, wherein both M and N are natural numbers greater than 1. The present invention may reduce the possibility of the oxidation of the amorphous silicon and improve the electrical parameters of the silicon substrate; moreover, as the machine for conducting the laser annealing does not require to set an inside camber, the weight of the machine may be reduced and the maintenance for the machine will be more easily to be achieved.