Error correction method and memory device

The present invention provides an error correction method applied to a memory device, wherein the memory device includes a plurality of pages. The error correction method includes: reading data of a plurality of first sectors of a first page in sequence according to a first read command; executing a first error correction on the read first sectors by an error correction module when reading the first page; producing a second read command when all of the first sectors of the first page are read; and reading data of a plurality of second sectors of a second page in sequence after all of the first sectors of the first page are read according to a second read command.