Gas flow optimization in reticle stage environment

A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprisin...

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Hauptverfasser: SCHUSTER, MARK JOSEF, WESTERLAKEN, JAN STEVEN CHRISTIAAN, LOOPSTRA, ERIK ROELOF, DE ANDRADE OLIVEIRA, MARCELO HENRIQUE, VAN BALLEGOIJ, ROBERTUS NICODEMUS JACOBUS, BURBANK, DANIEL NATHAN, VAN BOXTEL, FRANK JOHANNES JACOBUS, FONSECA JUNIOR, JOSE NILTON, SINGH, CHATTARBIR, ONVLEE, JOHANNES, WARD, CHRISTOPHER CHARLES, CUYPERS, KOEN, VAN BOKHOVEN, LAURENTIUS JOHANNES ADRIANUS, REMIE, MARINUS JAN, VAN DE VEN, HENRICUS ANITA JOZEF WILHEMUS
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate positioned between the movable stage and the projection system. The plate includes an opening that comprises a first sidewall and a second sidewall. The plate may be configured to provide a gas flow pattern in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system.