Gas flow optimization in reticle stage environment
A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprisin...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate positioned between the movable stage and the projection system. The plate includes an opening that comprises a first sidewall and a second sidewall. The plate may be configured to provide a gas flow pattern in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system. |
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