Transistor structure and driving circuit structure

A transistor structure disposed on a substrate includes a gate electrode, a gate insulating layer overlapped with the gate electrode, a channel layer overlapped with the gate electrode and a plurality of first electrodes and a plurality of second electrodes overlapped with the gate electrode. The gate insulating layer is disposed between the channel layer and the gate electrode. The gate insulating layer is located between the first electrodes, the second electrodes and the gate electrode. The first electrodes and the second electrodes are alternately arranged along a first direction. Each of the first electrodes has a first width along the first direction. Each of the second electrodes has a second width along the first direction. The ratio of the first width and the second width is between 2 to 20. A driving circuit structure having the aforementioned transistor structure is also provided.