Plasma processing device and method of controlling heater temperature

A plasma processing device in which high-frequency power is used to convert a gas to a plasma, and a processing target object is subjected to plasma processing via the action of the plasma, the plasma processing device comprising: a pressure-reducible chamber, a mounting stage provided inside the chamber on which the processing target object is mounted, an electrostatic chuck, which is provided on the mounting stage and electrostatically adsorbs the processing target object by application of a voltage to a chuck electrode, a heater which is provided in or near the electrostatic chuck, and is divided into a circular center zone, two or more concentric middle zones provided concentrically around the outside of the center zone, and an edge zone provided concentrically at the outermost periphery, and a temperature control section which adjusts the heater control temperature in each of the divided zones.