Waste gas processing method of plasma-enhanced chemical vapor deposition process

This invention relates to a waste gas processing method of a plasma-enhanced chemical vapor deposition process, which improves the conventional three-stage PECVD process waste gas processing procedure including pickling, heating and re-pickling. The improvement of this invention lies in that the PEC...

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Bibliographische Detailangaben
1. Verfasser:	LEE, KUENYR
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEPARATION SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	This invention relates to a waste gas processing method of a plasma-enhanced chemical vapor deposition process, which improves the conventional three-stage PECVD process waste gas processing procedure including pickling, heating and re-pickling. The improvement of this invention lies in that the PECVD process waste gas is processed in the following two stages: (A) a heating step; and (B) a pickling step. This invention is mainly utilized to process the waste gas produced when using the PECVD process to perform film deposition for a solar thin film cell. Because the waste gas produced by using the PECVD process to perform film deposition for a solar thin film cell contains only minor dust, so the pickling process of the step (B) of this invention is sufficient to effectively remove the minor dust contained in the waste gas.