Semiconductor package with heat dissipation structure and manufacturing method thereof

The present invention relates to a semiconductor package with heat dissipation structure and manufacturing method thereof. The semiconductor package comprises a first substrate, a die, a metal heat conductor and a lid. The first substrate having an upper surface, and a first die disposed on the uppe...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HUANG, MIN-LUNG, YEH, YUNG-YI, PI, TUNING, CHEN, JIANNG, HUNG, CHENG-HUI, KAO, JENIEH
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present invention relates to a semiconductor package with heat dissipation structure and manufacturing method thereof. The semiconductor package comprises a first substrate, a die, a metal heat conductor and a lid. The first substrate having an upper surface, and a first die disposed on the upper surface. The first die has a top surface and a first contact layer formed on the top surface. The metal heat conductor is disposed on the first contact layer. The lid disposed on the metal heat conductor has an inner surface, a second contact layer contacting against the metal heat conductor and a dam. The second contact layer and the dam are formed on the inner surface, wherein the dam surrounds the metal heat conductor and capable of limiting the position of the metal heat conductor. This invention confirms that the metal heat conductor could be limited within the dam under high temperature processes, thereby preventing the flow of metal heat conductor caused by melting at high temperature.