Tungsten film forming method

The subject of this invention is to provide a tungsten film forming method with an uncomplicated engineering for removing partially buried voids or seams. The solution means comprises: an engineering for forming, in a processing container, a tungsten film on a void-containing substrate by CVD to for...

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Bibliographische Detailangaben
Hauptverfasser:	MURAKAMI, SEISHI, TANAKA, MITSUO, SATOH, KOHICHI, AIBA, YASUSHI, HORIKOSHI, TOHKO, URANO, TOMONARI, ISHIKAWA, MAYUKO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The subject of this invention is to provide a tungsten film forming method with an uncomplicated engineering for removing partially buried voids or seams. The solution means comprises: an engineering for forming, in a processing container, a tungsten film on a void-containing substrate by CVD to form tungsten buried portion in the void; an engineering for forming openings by supplying ClF3 gas or F2 gas in the same processing container as etching gas to etch the upper part of the buried portion; and an engineering for forming a tungsten film by CVD on the substrate with the buried portion having formed openings in the same processing container.