A method for preparing indium sulfide thin film

A method for preparing indium sulfide film is provided. The method includes: providing a mixed solution of a complexing agent, indium ion, and hydrogen sulfide ion; and contacting the mixed solution with a substrate to form a indium sulfide film thereon; wherein the complexing agent has the followin...

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Bibliographische Detailangaben
Hauptverfasser:	WU, CHUNG-SHIN, SHENG, PEI-SUN, WANG, YU-YUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACYCLIC OR CARBOCYCLIC COMPOUNDS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method for preparing indium sulfide film is provided. The method includes: providing a mixed solution of a complexing agent, indium ion, and hydrogen sulfide ion; and contacting the mixed solution with a substrate to form a indium sulfide film thereon; wherein the complexing agent has the following formula: wherein each of R1 and R2 respectively is hydrogen or hydroxyl.