Non-volatile memory device and method of fabricating the same

A method of fabricating a non-volatile memory device is provided. Two first conductive layers, a second conductive layer, a dielectric layer and a capping layer are formed on a substrate. The first conductive layers are located two sides of the second conductive layer. The dielectric layer is locate...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHANG, MING-FENG, HUANG, DANIEL LIUNG, KUO, YUANANG, CHAN, HONG-WEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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