Non-volatile memory device and method of fabricating the same

A method of fabricating a non-volatile memory device is provided. Two first conductive layers, a second conductive layer, a dielectric layer and a capping layer are formed on a substrate. The first conductive layers are located two sides of the second conductive layer. The dielectric layer is located between the substrate and the first conductive layer, between the substrate and the second conductive layer, and between the second conductive layer and the first conductive layer. The capping layer is located on the second conductive layer. Thereafter, an insulating layer is formed to cover a region excluded the second conductive layer. A portion of the second conductive layer is removed to form a cave on the second conductive layer. A metal element layer is formed in the cave to electrically connect the second conductive layer.