Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods

Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods

Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.

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Bibliographische Detailangaben
Hauptverfasser: FLANNERY, LAWRENCE P, GRABBE, ALEXIS
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.