Deposition apparatus and deposition method

A technique is provided which is able to reduce waste of evaporated material due to standby time during deposition. In this deposition apparatus (1), a substrate loading and unloading region (6), a deposition region (7), and a standby region (8) are provided inside a vacuum chamber (2). A combined s...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NAGATA, JUNICHI, HANE, KOUJI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A technique is provided which is able to reduce waste of evaporated material due to standby time during deposition. In this deposition apparatus (1), a substrate loading and unloading region (6), a deposition region (7), and a standby region (8) are provided inside a vacuum chamber (2). A combined substrate (10) and mask mechanism (11) are transported between a deposition start position (21a) and the deposition region (7) by a substrate transport mechanism (21). A combined plurality of substrates (10) and mask mechanism (11) are transported between the substrate loading and unloading region (6) and the deposition start position (21a), and between the deposition start position (21a) and the standby region (8), respectively, by first and second substrate raising and lowering mechanisms (221, 222). The standby region (8) is provided in a position that does not overlap with the substrate transport mechanism (21).