Resistive switching memories and the manufacturing method thereof

Resistive switching memories and the manufacturing method thereof

A resistive switching memory was layered by a first electrode, an insulating layer with several point electrodes, a diffusing metal layer, and a second electrode. The manufacturing method thereof comprises: forming the insulating layer on the surface of the first electrode; growing a diffusing metal...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YANG, POUN, LIN, YU-SHIH, JIAN, FU-YEN, CHEN, SHIHING, CHANG, TINGANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A resistive switching memory was layered by a first electrode, an insulating layer with several point electrodes, a diffusing metal layer, and a second electrode. The manufacturing method thereof comprises: forming the insulating layer on the surface of the first electrode; growing a diffusing metal material on the surface of the insulating layer to be the diffusing metal layer; providing the second electrode on the surface of the diffusing metal layer; providing a voltage between the first and the second electrode to oxide the diffusing metal material into metal ions forced into the insulating layer to form the point electrodes.