Apparatus and control method for plasma enhanced atomic layer deposition

The present invention provides an apparatus sand control method for plasma enhanced atomic layer deposition. The apparatus comprises a plurality of reaction chambers and a moveable partition, wherein each reaction chamber has at least two reaction spaces, and a movable carrier for supporting a subst...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, KANG-FENG, HUANG, JEN-RONG, HO, JUNGN, SHEN, TEAN-MU, LEE, SHENG-LANG, CHIANG, CHINONG, WANG, CHINGIUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides an apparatus sand control method for plasma enhanced atomic layer deposition. The apparatus comprises a plurality of reaction chambers and a moveable partition, wherein each reaction chamber has at least two reaction spaces, and a movable carrier for supporting a substrate. The control method is utilized for controlling the moveable partition to move into each reaction chamber in an appropriate timing so that two reaction spaces in each chamber can be selectively partitioned or communicated with each other by switching the partition, thereby preventing micro particles formed by different processing gases reacting with each other in the reaction spaces from contaminating the surface of the substrate.