Semiconductor light emitting diode, lamp, electronic equipment, and device

A semiconductor light emitting diode (1) which comprises: a semiconductor layer (10), an n type electrode (18) which is provided on the exposed surface (12a) of an n type semiconductor layer, wherein the exposed surface has been exposed by notching part of the semiconductor layer (10), a transparent conductive film provided on the semiconductor layer (10), a p type electrode (17) provided on the transparent conductive film, and a light reflecting layer (39) provided between the semiconductor layer (10) and the transparent conductive film, wherein at least part of the light reflecting layer overlaps with the p type electrode (17) when the light reflecting layer is observed in planer view; wherein the p type electrode (17) consists of a pad portion (P) and a linear portion (L), which linearly extends from the pad portion and has an annular structure when the linear portion is observed in planer view; the n type electrode (18) exists in an inner area, which is surrounded by the linear portion (L), and exists on