Reflection electron beam projection lithography using an ExB separator

One embodiment disclosed relates to an apparatus for reflection electron beam lithography. The apparatus includes an electron source, a patterned electron reflector generator structure, a stage, a demagnifying electron lens, and an ExB separator. The ExB separator configured to bend a trajectory of the electron beam towards the dynamic pattern generator structure. The patterned electron reflector structure is configured to reflect select portions of the electron beam so as to form a patterned electron beam. The ExB separator is further configured to allow the patterned electron beam to pass straight through towards the demagnifying electron lens. The demagnifying electron lens is configured to demagnify the patterned electron beam and project the demagnified patterned electron beam onto the target substrate. The apparatus disclosed herein has a straight projection axis and substantially reduces the electron beam path by a factor of three-to-one (compared to a prior apparatus which uses a magnetic prism).