Methods of forming pattern structures and methods of manufacturing memory devices using the same

Methods of forming pattern structures and methods of manufacturing memory devices using the same

Methods of forming pattern structures and methods of manufacturing memory devices using the same are provided, the methods of forming pattern structures include forming an etching object layer on a substrate and performing a plasma reactive etching process on the etching object layer using an etchin...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: EOM, KYOUNG-HA, RYU, YONG-HWAN, HWANG, JAE-SEUNG, KWON, SUNG-UN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods of forming pattern structures and methods of manufacturing memory devices using the same are provided, the methods of forming pattern structures include forming an etching object layer on a substrate and performing a plasma reactive etching process on the etching object layer using an etching gas including at least ammonia (NH3) gas. The etching object layer includes a magnetic material or a phase change material.