Pad for chemical mechanical polishing and method of chemical mechanical polishing using same

Disclosed is a pad for chemical mechanical polishing, characterized by comprising a polishing layer formed from a composition containing a thermoplastic polyurethane, the polishing layer having a specific gravity of 1.15-1.30 and a Shore D durometer hardness of 50-80.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	YOKOI, KATSUTAKA, KAMO, SATOSHI, NISHIGUCHI, NAOKI, TANO, HIROYUKI, SHIDA, HIROTAKA, TONSHO, SHINJI, SATOU, KEIICHI, MAEKAWA, AYAKO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Disclosed is a pad for chemical mechanical polishing, characterized by comprising a polishing layer formed from a composition containing a thermoplastic polyurethane, the polishing layer having a specific gravity of 1.15-1.30 and a Shore D durometer hardness of 50-80.