Solar cell including an anti-reflection layer having a sandwich structure and method for manufacturing the same

A solar cell is provided which includes a silicon substrate, an anti-reflection layer and an electrode structure. The silicon substrate has a first type area and a second type area which are in contact with each other. The anti-reflection layer includes a first silicon nitride layer, an amorphous si...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, YUOU, HSU, MINGUNG, HSIEH, TSUNG-FANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	A solar cell is provided which includes a silicon substrate, an anti-reflection layer and an electrode structure. The silicon substrate has a first type area and a second type area which are in contact with each other. The anti-reflection layer includes a first silicon nitride layer, an amorphous silicon nitride layer, and a second silicon nitride layer. The first silicon nitride layer is disposed on the first type area of the silicon substrate. The amorphous silicon nitride layer is disposed on the first silicon nitride layer. The second silicon nitride layer is disposed on the amorphous silicon nitride layer. The electrode structure is in electric contact with the first type area and the second type area.