Method for forming crystalline silicon film

A method of forming a crystalline silicon film is provided. First, a substrate having a first silicon film such as an amorphous silicon film is provided. Subsequently, a transition process is performed on the first silicon film to form a seed layer. The transition process includes a hydrogen plasma...

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Bibliographische Detailangaben
Hauptverfasser:	CHIANG, MEI-TSAO, TSOU, YUAN-HSIN, CHEN, YI-LIANG, TSAI, YAOANG, LIN, CHIUNG-WEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of forming a crystalline silicon film is provided. First, a substrate having a first silicon film such as an amorphous silicon film is provided. Subsequently, a transition process is performed on the first silicon film to form a seed layer. The transition process includes a hydrogen plasma process and a helium plasma process. Finally, a second silicon film such as a microcrystalline silicon film is directly formed on the seed layer. By introducing the transition process including the hydrogen plasma process and the helium plasma process, the invention is advantageous for its lower cost and higher quality.